Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors

This article studies the sub-linearity of output characteristics measured in Schottky-barrier metal-oxide-semiconductor field-effect transistors with simulations and experiments. It is shown that not due to forward-biased Schottky diode at drain contact interface but bias impact on source-side Schottky-barrier, resulting an increased carrier injection increasing drain–source voltage. The simulation results are confirmed measurements fabricated dual-gate transistors.